Concept and operation of Schottky emitter without suppressor electrode

نویسندگان

  • A. K. Dokania
  • P. Kruit
چکیده

The Schottky electron emitter is the most frequently used electron source in electron microscopes. A suppressor electrode around the emitter is usually employed to prevent emission from the shank of the cathode. A concept of operating the Schottky emitter without the suppressor electrode is proposed with the aim of lowering the potential of the extractor electrode. Simulation results show that if the suppressor electrode is removed, then the same field as for the standard configuration can be obtained at the tip apex at an extraction voltage of 2265 V instead of 5000 V. The total emission from the shank region is calculated by estimating the emission area of the shank, taking into the account the different work functions of the crystal facets. The total emission for typical operating parameters is calculated to rise from 500 to 668 A. The total emission from the shank and the filament of the Schottky emitter is measured experimentally in two different configurations, which match with the simulated results. The measured total emission of 450–750 A confirms the idea that a Schottky emitter can be operated without suppressor, all the more so because the power at the extractor aperture is even reduced as a result of the lower acceleration voltage. © 2009 American Vacuum Society. DOI: 10.1116/1.3258657

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Multi-emitter Si/Ge Si Heterojunction Bipolar Transistor with No Base Contact and Enhanced Logic Functionality

We demonstrate multi-emitter Si/GexSi1 x npn heterojunction bipolar transistors (HBT’s) which require no base contact for transistor operation. The base current is supplied by the additional emitter contact under reverse bias due to the heavy doping of the emitter-base junction. Large-area HBT test structures exhibit good transistor characteristics, with current gain 400 regardless of whether t...

متن کامل

Effect of the electric field on the form stability of a Schottky electron emitter: A step model

The stability of the physical shape of an electron emitter co determines the stability of the performance of electron-beam equipment. A typical short-term instability of the Schottky electron source is the instability of the 100 facet at the tip end known as “collapsing rings.” This instability causes probe instabilities, but it is known from experiments that this can be prevented by applying h...

متن کامل

Small-Scaled InGaP/GaAs HBT’s with WSi/Ti Base Electrode and Buried SiO

This paper describes the fabrication and characteristics of small-scaled InGaP/GaAs HBT’s with high-speed as well as low-current operation. To reduce both the emitter size SE and the base–collector capacitance CBC simultaneously, the HBT’s are fabricated by using WSi/Ti as the base electrode and by burying SiO2 in the extrinsic base–collector region under the base electrode. WSi/Ti simplifies a...

متن کامل

Monolithically Integrated GaInP/GaAs High-Voltage HBTs and Fast Power Schottky Diodes for Switch-Mode Amplifiers

Based on mature and high-yield high-voltage (HV) HBT technology monolithically integrated ultra-fast Schottky diodes are developed. The Schottky diodes take full advantage of the optimized HV-HBT layer structure allowing for diode ́s breakdown voltage of 80 V. Due to optimized thermal mounting using priopriatery flip-chip soldering high current switching capability up to 4 A at 60 V was demonstr...

متن کامل

Advances in Thermionic Energy Conversion through Single-Crystal n-Type Diamond

Thermionic energy conversion, a process that allows direct transformation of thermal to electrical energy, presents a means of efficient electrical power generation as the hot and cold side of the corresponding heat engine are separated by a vacuum gap. Conversion efficiencies approaching those of the Carnot cycle are possible if material parameters of the active elements at the converter, i.e....

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2013